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RssApplied Mathematcs&Physics, mathematical models, simulations, software

Position in model design and analysis, numerical simulation and software development.

Scientist

Pleasanton, CA

About Me

Industry:

Research

Occupation:

Scientist

Highlights:

I develop numerical models, numerical methods and software tools for numerical modeling of transient crystal growth processes of bulk crystal growth of doped and compound materials (with taken into account phase diagram and chemical reactions). Efficient numerical methods provide stable solution and high performance that allows the simulating of long-time crystal growth processes without using power supercomputers. I suggested the numerical criterion for the prediction of defect appearance during directional crystallization. This criterion and my fast calculations could help in the design of low defect growth of different semiconductors of large size (diameter and length) and how to improve the current technology regime. I have about sixty publications; twenty seven papers are peer-reviewed research publications.
 

Education level:

Doctorate

Will Relocate:

Yes

Location:

Pleasanton, CA

Work Experiences

2/2008 - Present

(private)

Self-Employed

  • • Performed transient mathematical modeling of processes of directional solidification of crystal growth

9/2006 - 9/2007

AXT, Inc

Contractor / Freelance

  • • Performed transient mathematical modeling of extensive number of GaAs growth processes by VGF; • Numerical study of crystallization dynamics at the point of defect appearance; • Developed numerical criterion of defect appearance during crystal growth process; • Presentations and training sections for engineers devoted to explanations of peculiarities of VGF process; • Recommended technology modifications for yield improvement and reducing of cycle time.

3/1995 - 12/2005

Institute for Mathematical Modeling, Russian Academy of Sciences, Moscow, Russia

Individual Contributor

  • Developed mathematical models, numarical methods, software for simulations of transient crystallization processes of different semiconductros (pur, doped and compound alloys). Numerical simulations of crystal growth experiments performed in different research organizations of Russia, USA, France, Spaine, Latvia.Results were presented at 13 scientific conferences, more than forty presentations were done. About fifty papres were published.

9/1985 - 3/1995

Keldysh Institute of Applied Mathematics, Russian Academy of Sciences, Moscow, Russia

Individual Contributor

  • Developed mathematical models, numerical methods and software for calculations of steady state (and quasy steady state) problem of crystal growth, Performed simulations of different crystal growth experiments in quasy steady state formulations.

Education

Keywords